M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 55

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 22.
1. Unspecified data bits should be ignored.
Program
Program during erase suspend
Enhanced Buffered Program
Entry
Buffered program abort
Program error
Chip erase
Block erase before timeout
Block erase
Erase suspend
Erase error
Operation
Status register bits
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Any address
Non-erasing
Non-erasing
Non-erasing
Faulty block
Good block
(1)
Address
address
address
block
block
block
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
-
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data read as normal
DQ6
No
DQ5 DQ3
0
0
0
0
1
0
0
0
0
0
0
1
1
–
–
–
–
1
0
0
1
1
–
1
1
-
Toggle
Toggle
Toggle
Toggle
Toggle
toggle
toggle
toggle
DQ2
No
No
No
–
–
–
–
-
DQ1
0
–
1
–
–
–
–
–
–
–
–
–
–
-
55/97
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0
0