M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 71

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 21. Reset AC waveforms (no program/erase ongoing)
Figure 22. Reset during program/erase operation AC waveforms
Table 31.
1. Only available upon customer request.
2. Sampled only, not 100% tested.
t
t
RHEL,
PHEL,
Symbol
t
t
t
PHWL
RHWL
PLYH
t
PLPX
t
t
RHGL,
PHGL,
RB
E, G, W
RP
RB
E, G,
RP
(2)
(2)
(2)
W
Reset AC characteristics
t
READ
t
Alt.
t
t
RPD
t
RH
RP
RB
Y
RP Low to read mode, during program or erase
RP pulse width
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
RP Low to standby mode, during read mode
RP Low to standby mode, during program or erase Min
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
tPLPX
tPLPX
tPHEL,
tPHWL
tPHGL
tRHEL, tRHGL, tRHWL
tPLYH
Parameter
Max
Min
Min
Min
Min
60
(1)
55
20
55
20
55
0
ns
M29W256GH,
M29W256GL
70 ns
55
20
55
20
55
0
AI11301c
80 ns
55
20
55
20
55
0
AI11300c
Unit
71/97
µs
µs
ns
µs
µs
ns