M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 87

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 41.
1. The values given in the above table are valid for both packages.
1Bh
1Ch
1Dh
1Eh
x16
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
CFI query system interface information
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00B5h
00C5h
0027h
0036h
0004h
0004h
0009h
0004h
0004h
0003h
0004h
0011h
Data
Maximum timeout for chip erase = 2
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout for single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout for individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
CC
CC
PPH
PPH
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
(1)
Description
n
n
times typical
ms
n
n
n
ms
times typical
times typical
n
n
times typical
µs
n
µs
200 µs
200 µs
12.5 V
11.5 V
Value
16 µs
16 µs
800 s
2.7 V
3.6 V
0.5 s
2.3 s
80 s
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