M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 33

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 12.
1. X don’t care, PA program address, PD program data, BAd any address in the block. All values in the table are in
2. These cells represent read cycles. The other cells are write cycles.
3. The auto select addresses and data are given in
4. In unlock bypass, the first two unlock cycles are no more needed (see
Read/Reset
Auto
Select
Program
Chip Erase
Block Erase
Erase/Program Suspend
Erase/Program Resume
Read CFI Query
hexadecimal.
method (8-bit
that is ‘don’t care’.
Table 17: Write to buffer commands, 16-bit
(4)
Manufacturer code
Device code
Extended memory
block protection
indicator
Block protection
status
Command
Standard commands, 8-bit mode
mode), and
Table 8: Block protection - auto select mode - programmer method (8-bit
6+
1
3
3
4
6
1
1
1
Add
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
1st
mode).
Data Add Data
AA
AA
AA
AA
AA
F0
B0
98
30
Table 6: Read electronic signature - auto select mode - programmer
555
555
555
555
555
2nd
55
55
55
55
55
Add
AAA
AAA
AAA
AAA
Table 16: Write to buffer commands, 8-bit mode
X
Bus operations
3rd
Data Add Data Add Data Add Data
A0
F0
90
80
80
AAA
AAA
(2)(3)
PA
4th
(1)
(2)(3)
PD
AA
AA
555
555
mode), except for A9
5th
55
55
AAA
BAd
6th
and
33/97
10
30