M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 46

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

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Figure 7.
NVPB program/erase algorithm
NO
Read Byte twice
Read Byte twice
Program NVPB
command set.
Enter NVPB
Addr = BAd
Addr = BAd
Addr = BAd
Toggle
DQ5=1
Toggle
DQ6=
Reset
DQ6=
Fail
YES
YES
NO
command set
NO
Exit NVPB
NO
Read Byte twice
Wait 500 μs
Addr = BAd
'0'(Program)
'1'(Erase)
DQ0=
Pass
YES
AI14242