M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 95

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

2. When the block address is specified, all the addresses in the selected block address space must be issued starting from
3. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.
4. If this flowchart location is reached because DQ5=’1’, then the Enhanced Buffered Program command failed. If this
5. See
(00). Furthermore, when loading write buffer address with data, data program addresses must be consecutive.
flowchart location is reached because DQ1=’1’, then the Enhanced Buffered Program command aborted. In both cases, the
appropriate reset command must be issued to return the device in read mode: a Reset command if the operation failed, a
Buffered Program Abort and Reset command if the operation aborted.
sequence.
Table 18: Enhanced buffered program commands, 16-bit
mode, for details on Enhanced Buffered Program command
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