M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 42

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Note:
42/97
The enhanced buffered programming sequence can be aborted in the following ways:
Table 18.
The abort condition is indicated by DQ1 = 1, DQ6 = toggle, and DQ5 = 0 (all of which are
status register bits).
Enhanced Buffered Program commands are available for x 16 mode only.
Enter Enhanced
Buffered Program
Command Set
Enhanced Buffered
Program
Exit Enhanced
Buffered Program
Command Set
Enhanced Buffered
Program Abort Reset
Command
Write to an address in a block different than the one specified during the buffer load.
Write an address/data pair to a different buffer-page than the one selected by the
starting address during the buffer data loading stage of the operation
Write data other than the Confirm command after the 256 data load cycles.
Load address/data pairs in an incorrect sequence during the enhanced buffered
program.
Load a number of data that is less or greater than 256 during the program step.
Enhanced buffered program commands, 16-bit mode
258 BAd
3
2
3
Add
555
555
X
1st
Data
AA
AA
33
90
Add Data Add Data
2AA
BAd
2AA
(00)
X
2nd
Data
55
00
55
BAd
(01)
555
555
3rd
Data
38
F0
Bus write operations
Add
...
...
Data
...
Add
BAd
(FE)
256th
Data
Data
Add
BAd
(FF)
257th
Data
Data
Add
BAd
(00)
258th
Data
29