M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 67

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 29.
1. Only available upon customer request.
2. Sampled only, not 100% tested.
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
DVWH
WHDX
WHEH
WHWL
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
(2)
Write AC characteristics, write enable controlled
M
t
t
t
t
BUSY
t
t
WPH
OEH
Alt
t
t
t
t
t
t
VCS
WC
WP
CS
DS
DH
CH
AH
AS
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
High to Chip Enable Low
Parameter
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
M29W256GH, M29W256GL
60 ns
65
35
45
30
45
30
50
0
0
0
0
0
0
(1)
70 ns
35
45
50
75
45
30
30
0
0
0
0
0
0
80 ns
85
35
45
30
45
30
50
0
0
0
0
0
0
Unit
67/97
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs