BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 10

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

2.4
Table 4
Parameter
Supply voltage
Supply current high gain
mode
Supply current low gain
mode
Supply current standby
mode
Logic level high
Logic level low
Logic currents VEN
Logic currents VGS
2.5
Table 5
VEN1
VEN2
Table 6
VGS
Data Sheet
DC Characteristics
DC Characteristics,
Band Select / Gain Control Truth Table
Band Select Truth Table,
Gain Control Truth Table,
High band
H
H
Symbol
V
I
I
I
V
V
I
I
I
I
CCHG
CCLG
CCOFF
ENL
ENH
GSL
GSH
CC
HI
LO
T
A
=-30 ... 85 °C
High Gain
H
V
Min.
2.6
–
–
–
1.5
–
–
–
–
–
V
CC
CC
= 2.8 V
= 2.8 V
Mid band
H
L
Typ.
2.8
4.0
3.4
650
0.1
2.8
0.0
0.1
10.0
0.1
5.0
Values
10
High Linearity Tri-Band LTE/UMTS LNA
Max.
3.0
–
–
2.0
–
0.5
–
–
–
–
Low band
L
H
Unit
V
mA
µA
µA
V
V
µA
µA
µA
µA
Low Gain
L
Note / Test Condition
–
High band
Mid and low band
All bands
–
VEN1, VEN2 and VGS
VEN1 and VEN2
VGS
Electrical Characteristics
Revision 3.8, 2010-12-23
Power Down
L
L
BGA735N16