BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 9

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

2
2.1
Table 1
Parameter
Supply voltage
Supply current
Pin voltage
Pin voltage RF Input Pins
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
2.2
Table 2
Parameter
Thermal resistance junction to
soldering point
2.3
Table 3
Parameter
ESD hardness HBM
1) According to JESD22-A114
Data Sheet
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
Thermal Resistance
Thermal Resistance
ESD Integrity
ESD Integrity
1)
Symbol
V
I
V
V
P
T
T
T
Symbol
R
Symbol
V
CC
j
A
stg
CC
PIN
RFIN
RFIN
thJS
ESD-HBM
Min.
-0.3
–
-0.3
-0.3
–
–
-30
-65
Min.
–
Min.
–
Typ.
–
–
–
–
–
–
–
–
Typ.
–
Typ.
2000
Values
Values
Values
9
High Linearity Tri-Band LTE/UMTS LNA
Max.
3.6
10
V
0.9
4
150
85
150
Max.
≤ 37
Max.
–
CC
+0.3 V
Unit
V
mA
V
dBm
°C
°C
°C
Unit
K/W
Unit
V
–
–
All pins except RF input pins.
–
–
–
–
–
–
All pins
Note / Test Condition
Note / Test Condition
Note / Test Condition
Electrical Characteristics
Revision 3.8, 2010-12-23
BGA735N16