BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 7

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

High Linearity Tri-Band LTE/UMTS LNA
(2600/2300/2100, 1900/1800, 900/800/700 MHz)
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Main features:
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Description
The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low
noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology,
the BGA735N16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily
applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing
the input and output matching network.
Note: LTE/UMTS bands 1/ 2/ 5 is the standard band combination for this product requiring no external output
Product Name
BGA735N16
Data Sheet
Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode
(800 MHz / 1900 MHz / 2100 MHz)
Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
Standby mode (< 2 µA typ.)
Output internally matched to 50 Ω
Inputs pre-matched to 50 Ω
2kV HBM ESD protection
Low external component count
Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm)
Pb-free (RoHS compliant) package
matching network.
Features
Package
TSNP-16-1
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Chip
T1530
Revision 3.8, 2010-12-23
Marking
BGA735
BGA735N16