BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 27

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3.4
Figure 5
Note: Package paddle (Pin 0) has to be RF grounded.
Table 22
Part Number
L1 ... L4
C1 ... C8
R
Data Sheet
REF
UMTS Bands 1, 2, 4, 10 and 20 Application Circuit Schematic
Application Circuit with Chip Outline (Top View)
Bill of Materials
Bands 1 / 4 / 10
Band 2
RFIN
RFIN
Part Type
Chip inductor
Chip capacitor
Chip resistor
10pF
10pF
C1
C3
22pF
C4
Band 20
RFIN
2 .7nH
3.3nH
22pF
C2
L1
L2
L1
L
L1
3 .3pF
100 pF
C5
C6
RFINM
RFINH
0
5
6
7
8
RFGNDM
9
n/c
n/c
GND
9.1 nH
L3
Manufacturer
Various
Various
Various
L1
10
4
RFINL
RFGNDH
10nF
C8
V
EN
27
V
= 0 / 2 .8V
CC
11
3
= 2.8V
Biasing & Logic
VCC
VEN2
BGA735N16_Appl_Bands_1_2_4_10_20_BlD.vsd
High Linearity Tri-Band LTE/UMTS LNA
Circuitry
V
V
GS
EN
= 0 / 2.8V
Size
0402
0402
0402
12
= 0 / 2 .8V
2
VEN 1
VGS
Application Circuit and Block Diagram
RFOUTM
RFOUTH
RREF
RFOUTL
n /c
16
15
14
13
1
8 .2pF
C7
R
27 kΩ
REF
9.1nH
L4
Revision 3.8, 2010-12-23
RFOUT
Band 2
RFOUT
Band 20
RFOUT
Bands 1 / 4 / 10
Comment
Wirewound, Q ≈ 50
BGA735N16