MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 126

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 48: Write Leveling Sequence
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Early remaining DQ
Late remaining DQ
Differential DQS 4
Prime DQ 5
Command
ODT
CK#
CK
MRS 1
Notes:
t MOD
NOP 2
t WLDQSEN
1. MRS: Load MR1 to enter write leveling mode.
2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
are driven LOW and remain in this state throughout the leveling procedure.
NOP
t WLMRD
NOP
t DQSL 3
NOP
t WLH
126
T1
NOP
Indicates a Break in
Time Scale
t WLO
t WLO
t WLO
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t DQSL 3
1Gb: x4, x8, x16 DDR3 SDRAM
NOP
t WLS
Undefined Driving Mode
NOP
T2
t DQSH 3
© 2006 Micron Technology, Inc. All rights reserved.
NOP
t WLO
t
DQSH (MIN) and
Write Leveling
NOP
Don’t Care
NOP
t
DQSL