MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 32

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Thermal Characteristics
Figure 14: Thermal Measurement Point
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Notes:
Table 8: Thermal Characteristics
Parameter/Condition
Operating case temperature
Junction-to-case (TOP)
L
1. MAX operating case temperature. T
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
5. The thermal resistance data is based off of a number of samples from multiple lots and
maximum T
ing operation.
3.9µs interval refresh rate. The use of SRT or ASR (if available) must be enabled.
should be viewed as a typical number.
(L/2)
C
exceeds +85°C, the DRAM must be refreshed externally at 2X refresh, which is a
C
during operation.
W
78-ball “HX”
78-ball “JP” - F Rev
78-ball “JP” - G Rev
86-ball “BY”
96-ball “LA”
96-ball “JT”
32
(W/2)
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package.
T c test point
1Gb: x4, x8, x16 DDR3 SDRAM
0 to +85
0 to +95
Value
tbd
tbd
3.2
4.9
2.8
2.8
Thermal Characteristics
Units
°C/W
© 2006 Micron Technology, Inc. All rights reserved.
°C
°C
Symbol
ΘJC
T
T
C
C
1, 2, 3, 4
Notes
1, 2, 3
C
5
dur-