MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 65

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Alternative 40 Ohm Driver
Table 43: 40 Ohm Driver Impedance Characteristics
40 Ohm Output Driver Sensitivity
Table 44: 40 Ohm Output Driver Sensitivity Definition
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
R
R
R
R
R
R
MR1[5,1]
ON(PD)
ON(PD)
ON(PD)
ON(PU)
ON(PU)
ON(PU)
Pull-up/pull-down mismatch (MM
0,0
Symbol
@ 0.2 × V
@ 0.5 × V
@ 0.8 × V
@ 0.2 × V
@ 0.5 × V
@ 0.8 × V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
R
40Ω
ON
Notes:
Note:
0.9 - dR
0.9 - dR
0.9 - dR
0.6 - dR
0.6 - dR
0.9 - dR
If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 43 can be expected to widen according to Table 44 and Table 45
(page 66).
1. Tolerance limits assume RZQ of 240Ω (±1%) and are applicable after proper ZQ calibra-
2. Measurement definition for mismatch between pull-up and pull-down (MM
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
1. ΔT = T - T(@ calibration), ΔV = V
Resistor
R
R
ON
ON
ON
ON
tion has been performed at a stable temperature and voltage (V
Refer to 40 Ohm Output Driver Sensitivity (page 65) if either the temperature or the
voltage changes after calibration.
ure both R
MM
vice operates between –40°C and 0°C (T
ON
ON
ON40(PD)
ON40(PU)
dTM × |ΔT| - dR
dTM × |ΔT| - dR
dTH × |ΔT| - dR
dTH × |ΔT| - dR
dTL × |ΔT| - dR
dTL × |ΔT| - dR
PUPD
PUPD
)
=
Min
Ron
ON(PU)
Ron
PU
- Ron
and R
ON
ON
ON
ON
ON
ON
NOM
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.5 × V
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
V
PD
OUT
ON(PD)
× 100
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
65
at 0.5 × V
DDQ
1.1 + dR
1.1 + dR
- V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1.4 + dR
1.1 + dR
–10%
1.1 + dR
1.4 + dR
Min
0.6
0.9
0.9
0.9
0.9
0.6
DDQ
DDQ
C
).
:
(@ calibration), and V
ON
ON
ON
ON
1Gb: x4, x8, x16 DDR3 SDRAM
ON
ON
dTM × |ΔT| + dR
dTM × |ΔT| + dR
dTH × |ΔT| + dR
dTH × |ΔT| + dR
dTL × |ΔT| + dR
dTL × |ΔT| + dR
Output Driver Impedance
Nom
1.0
1.0
1.0
1.0
1.0
1.0
n/a
Max
© 2006 Micron Technology, Inc. All rights reserved.
ON
ON
ON
ON
ON
ON
DD
DDQ
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
Max
1.1
1.1
1.4
1.4
1.1
1.1
= V
10
= V
DDQ
DD
.
, V
PUPD
SSQ
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
). Meas-
= V
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
%
SS
).