MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 161

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 79: Data Strobe Timing – READs
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
early strobe
DQS, DQS#
DQS, DQS#
late strobe
CK#
CK
t LZ (DQS) MIN
T0
t LZ (DQS) MAX
t RPRE
t
parameters are referenced to a specific voltage level which specifies when the device
output is no longer driving
(DQ). Figure 80 (page 162) shows a method to calculate the point when the device is no
longer driving
ing the signal at two different voltages. The actual voltage measurement points are not
critical as long as the calculation is consistent. The parameters
(DQS), and
HZ and
t DQSCK (MIN)
t RPRE
Bit 0
RL measured
to this point
t
LZ transitions occur in the same access time as valid data transitions. These
T1
t QSH
t DQSCK (MAX)
t
HZ (DQ) are defined as single-ended.
Bit 0
Bit 1
t
HZ (DQS) and
t QSH
t DQSCK (MIN)
t QSL
Bit 1
Bit 2
t QSL
T2
t QSH
t DQSCK (MAX)
t
HZ (DQS) and
Bit 2
161
Bit 3
t
HZ (DQ) or begins driving
t QSH
t DQSCK (MIN)
t QSL
Bit 4
Bit 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t QSL
T3
t DQSCK (MAX)
t
HZ (DQ) or begins driving
Bit 4
Bit 5
1Gb: x4, x8, x16 DDR3 SDRAM
t DQSCK (MIN)
Bit 5
Bit 6
T4
t
t DQSCK (MAX)
LZ (DQS),
Bit 6
Bit 7
© 2006 Micron Technology, Inc. All rights reserved.
t HZ (DQS) MIN
t RPST
t
LZ (DQS),
Bit 7
t
LZ (DQ) by measur-
t
t RPST
LZ (DQS),
T5
t HZ (DQS) MAX
t
LZ (DQ),
t
LZ
t
HZ
T6