MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 71

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Slew Rate Definitions for Differential Output Signals
Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS#
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
The differential output driver is summarized in Table 47 (page 68). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V
Table 49: Differential Output Slew Rate Definition
DQS, DQS#
Differential Output Slew
Output
Rates (Linear Signals)
ΔTF
diff
Falling
Rising
Edge
Output Characteristics and Operating Conditions
71
OL(AC)
V
V
OH,diff(AC)
OL,diff(AC)
From
and V
Measured
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OH(AC)
ΔTR
1Gb: x4, x8, x16 DDR3 SDRAM
V
V
diff
OH,diff(AC)
OL,diff(AC)
for differential signals.
To
© 2006 Micron Technology, Inc. All rights reserved.
V
V
V
V
0
OH,diff(AC)
OL,diff(AC)
OH,diff(AC)
OH,diff(AC)
Calculation
ΔTR
ΔTF
- V
- V
diff
diff
OL,diff(AC)
OL,diff(AC)