MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 54

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Slew Rate Definitions for Differential Input Signals
Figure 22: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and meas-
ured, as shown in Table 29 and Figure 22. The nominal slew rate for a rising signal is
defined as the slew rate between V
falling signal is defined as the slew rate between V
Table 29: Differential Input Slew Rate Definition
CK and DQS
reference
Differential Input
Input
(Linear Signals)
Slew Rates
Falling
Rising
Edge
ΔTF
diff
V
V
IH,diff,min
IL,diff,max
From
54
IL,diff,max
Measured
Electrical Specifications – DC and AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
and V
V
V
IH,diff,min
IL,diff,max
1Gb: x4, x8, x16 DDR3 SDRAM
To
IH,diff,min
IH,diff,min
ΔTR
diff
. The nominal slew rate for a
and V
© 2006 Micron Technology, Inc. All rights reserved.
V
V
IH,diff,min
IH,diff,min
IL,diff,max
Calculation
ΔTR,diff
ΔTF,diff
V
V
0
IH,diff,min
IL,diff,max
- V
- V
.
IL,diff,max
IL,diff,max