MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 196

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 116: Synchronous ODT (BC4)
Command
ODT
CK#
CKE
R
CK
TT
NOP
T0
NOP
T1
Notes:
NOP
T2
ODTH4
ODTL on = WL - 2
NOP
1. WL = 7. R
2. ODT must be held HIGH for at least ODTH4 after assertion (T1).
3. ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7).
4. ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the
5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must
T3
WRITE command with ODT HIGH to ODT registered LOW.
also be satisfied from the registration of the WRITE command at T7.
NOP
T4
TT,nom
NOP
T5
is enabled. R
NOP
T6
t AON (MIN)
t AON (MAX)
WRS4
ODTL off = WL - 2
T7
TT(WR)
ODTH4 (MIN)
ODTL on = WL - 2
NOP
is disabled.
T8
R
TT,nom
ODTH4
NOP
T9
t AOF (MAX)
t AOF (MIN)
NOP
T10
NOP
T11
t AON (MIN)
t AON (MAX)
NOP
T12
ODTLoff = WL - 2
NOP
T13
R
TT,nom
NOP
T14
NOP
T15
Transitioning
NOP
T16
Don’t Care
t AOF (MIN)
t AOF (MAX)
NOP
T17