MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 158

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 75: READ to PRECHARGE (BC4)
DQS, DQS#
Figure 76: READ to PRECHARGE (AL = 5, CL = 6)
DQS, DQS#
Figure 77: READ with Auto Precharge (AL = 4, CL = 6)
DQS, DQS#
Command
Command
Command
Address
Address
Address
CK#
CK#
CK#
CK
DQ
DQ
CK
DQ
CK
Bank a,
READ
Bank a,
Bank a,
Col n
READ
Col n
READ
T0
Col n
T0
T0
NOP
T1
NOP
NOP
T1
T1
NOP
T2
AL = 4
t RAS
NOP
NOP
T2
T2
t RTP
AL = 5
NOP
T3
NOP
NOP
T3
T3
NOP
T4
NOP
NOP
T4
T4
t RAS
Bank a,
(or all)
PRE
T5
NOP
NOP
T5
T5
NOP
T6
t RTP (MIN)
NOP
NOP
T6
T6
t RAS (MIN)
NOP
T7
CL = 6
t RTP
NOP
NOP
T7
T7
NOP
T8
DO
n
CL = 6
n + 1
DO
NOP
NOP
NOP
t RP
T8
T8
T9
n + 2
DO
n + 3
DO
NOP
T10
Bank a,
(or all)
PRE
NOP
T9
T9
NOP
T11
NOP
T10
NOP
T10
DO
n
NOP
T12
n + 1
DO
NOP
NOP
T11
T11
n + 2
DO
DO
n
Bank a,
Row b
T13
ACT
n + 3
n + 1
DO
DO
Indicates A Break in
Time Scale
NOP
t RP
NOP
T12
T12
n + 2
DO
NOP
T14
n + 3
DO
NOP
NOP
T13
T13
NOP
T15
Transitioning Data
Transitioning Data
Transitioning Data
NOP
NOP
T14
t RP
NOP
T16
Bank a,
Bank a,
Row b
Row b
T15
ACT
ACT
Don’t Care
Ta0
Don’t Care
NOP
Don’t Care
T17