LH79520N0M000B1 NXP Semiconductors, LH79520N0M000B1 Datasheet - Page 37

LH79520N0M000B1

Manufacturer Part Number
LH79520N0M000B1
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of LH79520N0M000B1

Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Processing Unit
Microcontroller
Operating Supply Voltage (min)
1.62V
Operating Supply Voltage (typ)
1.8V
Operating Supply Voltage (max)
1.98V
Package Type
LQFP
Screening Level
Industrial
Pin Count
176
Mounting
Surface Mount
Rad Hardened
No
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH79520N0M000B1
Manufacturer:
Sharp Microelectronics
Quantity:
10 000
System-on-Chip
SDRAM Memory Controller Waveforms
SDRAM Burst Read (page already open). Figure 17
shows the waveform and timing for SDRAM to Activate
a Bank and Write.
Preliminary data sheet
NOTES:
1. SDRAMcmd is the combination of nRAS, nCAS, nSDWE, and nSDCS(X).
2. tOVXXX represents tOVRA, tOVCA, tOVSDW, or tOVSC.
3. tOHXXX represents tOHRA, tOHCA, tOHSDW, or tOHSC.
4. nDQM is LOW.
5. SDCKE is HIGH.
SDRAMcmd
NOTES:
1. SDRAMcmd is the combination of nRAS, nCAS, nSDWE, and nSDCS(X).
2. tOVXXX represents tOVRA, tOVCA, tOVSDW, or tOVSC. Refer to the AC timing table.
3. tOHXXX represents tOHRA, tOHCA, tOHSDW, or tOHSC.
4. nDQM is LOW.
Figure 16 shows the waveform and timing for an
SDRAMcmd
A[15:0]
D[31:0]
SCLK
SDCKE
D[31:0]
A[15:0]
SCLK
t SDCLK
tSDCLK
Figure 17. SDRAM Bank Activate and Write
t OVXXX
tOVA
READ
Figure 16. SDRAM Burst Read
COLUMN
BANK,
t OHXXX
t OV
tOVC0
Rev. 01 — 16 July 2007
NXP Semiconductors
tOVA
tOVXXX
ACTIVE
tISD tIHD
tOVA
BANK,
tOHXXX
ROW
DATA n
DATA n + 1
DATA n + 2
DATA n + 3
tOVD
WRITE
COLUMN
DATA
BANK,
tOHD
LH79520
LH79520-35
79520-36
37

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