HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 47
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HYB 39S128160CE-7.5
Manufacturer Part Number
HYB 39S128160CE-7.5
Description
Manufacturer
Infineon Technologies
Type
SDRAMr
Datasheet
1.HYB_39S128160CE-7.5.pdf
(51 pages)
Specifications of HYB 39S128160CE-7.5
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
19. Precharge termination of a Burst
19.1 CAS Latency = 2
INFINEON Technologies
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Command
Hi Z
Activate
Bank A
RAx
RAx
T0
t
Command
CK2
T1
Bank A
Write
DAx0 DAx1
CAx
Precharge Termination
Write Data is masked.
T2
of a Write Burst.
T3
DAx2
T4
DAx3
Precharge
Command
T5
Bank A
T6
t
RP
Command
T7
Activate
Bank A
RAy
RAy
T8
48
Command
T9
Bank A
Read
CAy
T10
T11
Ay0
T12
Precharge
Command
Bank A
Ay1 Ay2
T13
t
RP
T14
128-MBit Synchronous DRAM
Command
Activate
Bank A
HYB39S128400/800/160CT(L)
RAz
RAz
T15 T16
Burst Length = 8 or Full Page, CAS Latency = 2
Command
Bank A
Read
CAz
T17
Precharge Termination
of a Read Burst.
T18 T19
Az0 Az1
Precharge
Command
Bank A
T20
Az2
t
RP
T21 T22
SPT03933