HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 47

• Manufacturer Part Number: HYB 39S128160CE-7.5
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB 39S128160CE-7.5

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

19. Precharge termination of a Burst
19.1 CAS Latency = 2
INFINEON Technologies
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Command
Hi Z
Activate
Bank A
RAx
RAx
T0
t
Command
CK2
T1
Bank A
Write
DAx0 DAx1
CAx
Precharge Termination
Write Data is masked.
T2
of a Write Burst.
T3
DAx2
T4
DAx3
Precharge
Command
T5
Bank A
T6
t
RP
Command
T7
Activate
Bank A
RAy
RAy
T8
48
Command
T9
Bank A
Read
CAy
T10
T11
Ay0
T12
Precharge
Command
Bank A
Ay1 Ay2
T13
t
RP
T14
128-MBit Synchronous DRAM
Command
Activate
Bank A
HYB39S128400/800/160CT(L)
RAz
RAz
T15 T16
Burst Length = 8 or Full Page, CAS Latency = 2
Command
Bank A
Read
CAz
T17
Precharge Termination
of a Read Burst.
T18 T19
Az0 Az1
Precharge
Command
Bank A
T20
Az2
t
RP
T21 T22
SPT03933