HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 50

• Manufacturer Part Number: HYB 39S128160CE-7.5
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB 39S128160CE-7.5

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

TABLE OF CONTENTS
128-MBit Synchronous DRAM
Ordering Information
Pin Definitions and Functions
Pin Configuration for x4, x8 & x16 Organized 128M-DRAMs
Functional Block Diagrams
Block Diagram: 32M x4 SDRAM (12 / 11 / 2 addressing
Block Diagram: 16M x8 SDRAM (12 / 10 / 2 addressing)
Block Diagram: 8M x16 SDRAM (12 / 9 / 2 addressing)
Signal Pin Description
Operation Definition
Address Inputs for Mode Register Set Operation
Power On and Initialization
Programming the Mode Register
Read and Write Operation
Refresh Mode
Burst Length and Sequence
DQM Function
Power Down
Auto Precharge
Precharge Command
Burst Termination.
Bank Selection by Address Bits
Electrical Characteristics
Absolute Maximum Ratings
Recommended Operation and DC Characteristics
Capacitance
Operating Currents
AC Characteristics
Package Outlines.
Table of Content.
Timing DIagrams.
INFINEON Technologies
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128-MBit Synchronous DRAM
HYB39S128400/800/160CT(L)