MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 19

• Manufacturer Part Number: MT45W256KW16BEGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W256KW16BEGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 14:
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
DQ[15:0]
LB#/UB#
A[16:0]
ADV#
A[17]
WAIT
WE#
OE#
CLK
CRE
CE#
Synchronous Mode Configuration Register WRITE Followed by READ ARRAY Operation
2
Notes:
High-Z
Latch control register value
t CEW
t CSP
t SP
t SP
t SP
t SP
OPCODE
1. Nondefault BCR settings for CR WRITE in synchronous mode followed by READ ARRAY
2. A[17] = LOW to load RCR; A[17] = HIGH to load BCR.
3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—addi-
t HD
t HD
t HD
t HD
operation: latency code 2 (3 clocks); WAIT active LOW; WAIT asserted during delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latch control register address
19
t CBPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
High-Z
3
Address
Address
Configuration Registers
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