MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 30

• Manufacturer Part Number: MT45W256KW16BEGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W256KW16BEGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table 7:
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
Description
Operating Current
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Asynchronous random READ/
WRITE
Asynchronous page READ
Initial access, burst READ/WRITE
Continuous burst READ
Continuous burst WRITE
Standby current
Electrical Characteristics and Operating Conditions
Wireless temperature
Notes:
1. The 3.6V I/O and the –30°C wireless temperature exceed the CellularRAM Workgroup 1.0
2. Input signals may overshoot to V
3. V
4. Input signals may undershoot to V
5. BCR[5] = 0b.
6. This parameter is specified with the outputs disabled to avoid external loading effects. The
7. I
specification of –25°C.
user must add the current required to drive output capacitance expected in the actual sys-
tem.
inputs must be driven either to V
after power-up, after changes to the PAR array partition, or when entering standby mode.
SB
IH
V
V
(MAX) values measured with PAR set to FULL ARRAY. To achieve low standby current, all
V
(MIN) value is not aligned with CellularRAM Workgroup 1.0 specification of V
1
IN
IN
chip enabled,
I
chip disabled
I
IN
OE# = V
Conditions
(–30ºC < T
OH
OL
CE# = V
= V
= V
= 0 to V
I
OUT
= +0.2mA
= –0.2mA
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
CC
CC
Q or 0V
Q or 0V
= 0
IH
CC
CC
C
or
Q
< +85ºC); Industrial temperature (–40ºC < T
Q
I
V
I
I
CC
V
I
CC
I
CC
V
V
V
V
I
CC
CC
I
CC
I
LO
OH
SB
OL
CC
LI
3W
IH
IL
1P
3R
1
2
Q
30
Symbol
Symbol
CC
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
Standard
104 MHz
104 MHz
104 MHz
Q or V
80 MHz
80 MHz
80 MHz
- 1.0V for periods less than 2ns during transitions.
–70
–70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
. I
SB
might be slightly higher for up to 500ms
V
0.8 V
CC
Min
–0.2
TYP
Q - 0.4
1.7
1.7
–
–
–
–
–
–
–
–
–
CC
Electrical Characteristics
Q
C
< +85ºC)
V
0.2 V
©2008 Micron Technology, Inc. All rights reserved.
CC
Max
Max
1.95
Q + 0.2
0.4
3.6
20
15
35
30
28
22
33
25
60
–
1
1
–
–
CC
Q
Unit
Unit
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
CC
Q - 0.4V.
Notes
Notes
2, 3
4
5
5
6
6
6
6
6
7