MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 32
MT45W256KW16BEGB-708 WT
Manufacturer Part Number
MT45W256KW16BEGB-708 WT
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W256KW16BEGB-708_WT.pdf
(58 pages)
Specifications of MT45W256KW16BEGB-708 WT
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Table 8:
Table 9:
Figure 26:
Figure 27:
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
Description
Description
Deep power-down
Input capacitance
Input/output capacitance (DQ)
Deep Power-Down Specifications
Capacitance
AC Input/Output Reference Waveform
Output Load Circuit
Notes:
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100% tested.
Input
1. AC test inputs are driven at V
2. Input timing begins at V
3. Output timing ends at V
1. All tests are performed with the outputs configured for full-drive strength (BCR[5] = 0b).
DUT
V
times (10% to 90%) <1.6ns.
V
CC
SS
1
Q
Q
T
C
= +25ºC; f = 1 MHz;
V
IN
Conditions
V
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
CC
Test point
V
= V
Q/2
IN
Conditions
CC
= 0V
2
Q or 0V; +25°C
30pF
50Ω
CC
CC
Q/2.
Q/2.
32
CC
VccQ/2
Symbol
Q for a logic 1 and V
C
C
Test points
IO
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Min
2.0
3.0
I
ZZ
SS
Q for a logic 0. Input rise and fall
Electrical Characteristics
V
Max
6.5
6.5
CC
Q/2
©2008 Micron Technology, Inc. All rights reserved.
3
Typ
10
Output
Unit
pF
pF
Unit
µA
Notes
1
1
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