IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 5

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
80
60
40
20
80
60
40
20
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
= 6V
1
2
3
2
10 V
V
V
GS
DS
-55 °C
4)
[V]
[V]
4)
4
3
5 V
25 °C
5
4
175 °C
3 V
4.5 V
3.5 V
4 V
page 5
6
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
100
60
50
40
30
20
10
80
60
40
20
= f(I
= f(T
-60
0
3 V
D
j
); T
); I
GS
-20
D
j
3.5 V
= 25 °C
= 15 A; V
20
20
GS
T
4 V
I
j
D
60
40
= 10 V
[°C]
[A]
IPG20N06S2L-35
100
4.5 V
60
4)
4)
140
2009-09-07
10 V
5 V
180
80