IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 9
IPG20N06S2L-35
Manufacturer Part Number
IPG20N06S2L-35
Description
MOSFET Power Dual N-Ch 55V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N06S2L-35
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N06S2L35XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPG20N06S2L-35
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
IPG20N06S2L-35
Manufacturer:
INF
Quantity:
9 999
Part Number:
IPG20N06S2L-35
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPG20N06S2L-35A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
Revision History
Version
Revision 1.0
Date
page 9
07.09.2009
Changes
Final Data Sheet
IPG20N06S2L-35
2009-09-07