IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 7

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
250
200
150
100
50
12
10
0
8
6
4
2
0
25
0
j
)
gate
10 A
15 A
5 A
D
); I
DD
50
D
= 20 A pulsed
5
4)
75
4)
Q
T
gate
100
j
10
[°C]
[nC]
125
15
11 V
150
44 V
175
20
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
65
62
59
56
53
50
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
IPG20N06S2L-35
g d
100
140
2009-09-07
Q
gate
180