N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 122

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N25Q128A11B1240F

Manufacturer Part Number
N25Q128A11B1240F
Description
IC SRL FLASH 128MB NMX 24-BGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet

Specifications of N25Q128A11B1240F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-TBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11B1240F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N25Q128A11B1240F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
9.2.11
9.2.12
122/185
Figure 55. Bulk Erase instruction sequence DIO-SPI
Program/Erase Suspend
The Program/Erase Suspend instruction allows the controller to interrupt a Program or an
Erase instruction, in particular: Sector Erase and Dual Command Page Program can be
suspended and erased while Subsector Erase, Bulk Erase, Write Non Volatile Configuration
register, and Program OTP cannot be suspended.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Program/Erase Suspend (PES)
instruction of the Extended SPI protocol.
Figure 56. Program/Erase Suspend instruction sequence DIO-SPI
Program/Erase Resume
After a Program/Erase suspend instruction, a Program/Erase Resume instruction is
required to continue performing the suspended Program or Erase sequence.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Program/Erase Resume (PER)
S
C
DQ0
DQ1
S
C
DQ0
DQ1
0
Instruction
0
Instruction
1
Dual_Program_Erase_Suspend
1
2
2
3
Dual_Bulk_Erase
3
4

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