N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 155

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N25Q128A11B1240F

Manufacturer Part Number
N25Q128A11B1240F
Description
IC SRL FLASH 128MB NMX 24-BGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet

Specifications of N25Q128A11B1240F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-TBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11B1240F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N25Q128A11B1240F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
9.3.22
DQ0
DQ1
DQ3
DQ2
S
C
Figure 96. Read Volatile Configuration Register instruction sequence QIO-SPI
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must previously have been executed. In case of Fast POR, the WREN
instruction is not required because a WREN instruction gets the device out from the Fast
POR state (See
Apart form the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Volatile
Configuration Register (WRVCR) instruction of the Extended SPI protocol, please refer to
Section 9.1.31: Write Volatile Configuration Register
Instruction
0
Section 11.1: Fast
1
2
5
4
6
7
3
1
0
2
3
4
5
4
6
7
Volatile Configuration Register Out
5
1
0
2
3
POR).
6
5
4
6
7
7
1
0
2
3
8
5
4
6
7
9 10 11 12 13 14 15
1
0
3
2
for further details.
5
4
7
6
1
0
3
2
4
5
7
6
0
1
3
2
4
5
7
6
0
1
3
2
Quad_Read_VCR
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