N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 52
N25Q128A11B1240F
Manufacturer Part Number
N25Q128A11B1240F
Description
IC SRL FLASH 128MB NMX 24-BGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet
1.N25Q128A11B1241F.pdf
(185 pages)
Specifications of N25Q128A11B1240F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-TBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11B1240F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A11B1240F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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HOLD
W/V
DQ0
DQ2
DQ1
DQ3
PP
C
S
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable, Subsector
Erase is allowed on the 8 boot sectors (for devices with bottom or top architecture).
Figure 9.
16,777,216 bytes (8 bits each)
256 sectors (64 Kbytes each)
In Bottom and Top versions: 8 bottom (top) 64 Kbytes boot sectors with 16 subsectors
(4 Kbytes) and 248 standard 64 KB sectors
65,536 pages (256 bytes each)
64 OTP bytes located outside the main memory array
Address Register
Control Logic
and Counter
Block diagram
00000h
I/O Shift Register
256 bytes (page size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
FFFFFFh
000FFh
64 OTP bytes
Register
Status
AI13722a
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