N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 157

• Manufacturer Part Number: N25Q128A11B1240F
• Description: IC SRL FLASH 128MB NMX 24-BGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: Forté™r

Specifications of N25Q128A11B1240F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-TBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: N25Q128A11B1240F

9.3.24
DQ0
DQ3
DQ1
DQ2
S
C
Figure 98. Read Volatile Enhanced Configuration Register instruction sequence
Write Volatile Enhanced Configuration Register
The Write Volatile Enhanced Configuration register (WRVECR) instruction allows new
values to be written to the Volatile Enhanced Configuration register. Before it can be
accepted, a write enable (WREN) instruction must previously have been executed. In case
of Fast POR the WREN instruction is not required because a WREN instruction gets the
device out from the Fast POR state (See
Apart form the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Volatile
Enhanced Configuration Register (WRVECR) instruction of the Extended SPI protocol,
please refer to
details.
Instruction
QIO-SPI
0
Section 9.1.33: Write Volatile Enhanced Configuration Register
1
2
5
4
6
7
3
1
0
2
3
4
5
4
6
7
5
1
0
2
3
Configuration Register Out
6
5
4
6
7
Volatile Enhanced
Section 11.1: Fast
7
1
0
2
3
8
5
4
6
7
9 10 11 12 13 14 15
1
0
3
2
5
4
7
6
1
0
3
2
POR).
4
5
7
6
0
1
3
2
4
5
7
6
Quad_Read_VECR
0
1
3
2
for further
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