N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 131

• Manufacturer Part Number: N25Q128A11B1240F
• Description: IC SRL FLASH 128MB NMX 24-BGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: Forté™r

Specifications of N25Q128A11B1240F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-TBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: N25Q128A11B1240F

9.2.25
S
C
DQ0
DQ1
Figure 69. Write Volatile Enhanced Configuration Register instruction sequence
Deep Power-down (DP)
The Deep-Power-down (DP) instruction sets the device in Deep Power-down mode. Apart
form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the instruction
functionality is exactly the same as the Deep Power-down (DP) instruction of the Extended
SPI protocol. The instruction sequence is shown in
sequence.
Figure 70. Deep Power-down instruction sequence
DQ0
DQ1
C
S
0
Instruction
1
DIO-SPI
2
3
0
Instruction
1
2
3
7
6
4
t
DP
Configuration Register In
5
4
5
Byte
Standby mode
Volatile Enhanced
3
2
6
1
0
Figure 70: Deep Power-down instruction
7
7
6
8
5
4
9 10 11
Deep power-down mode
Byte
Dual_Write_VECR
3
2
1
0
Dual_DP
131/185