PC28F512P30EFA Micron Technology Inc, PC28F512P30EFA Datasheet - Page 26
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PC28F512P30EFA
Manufacturer Part Number
PC28F512P30EFA
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PC28F512P30EFA.pdf
(86 pages)
Specifications of PC28F512P30EFA
Cell Type
NOR
Density
512Mb
Interface Type
Parallel/Serial
Address Bus
25b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
BGA
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
32M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PC28F512P30EFA
Manufacturer:
MICRON
Quantity:
1 000
Company:
Part Number:
PC28F512P30EFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
8.3.1
Table 10: BEFP Requirements
Note:
Table 11: BEFP Considerations
Notes:
1.
2.
3.
8.3.2
Note:
Datasheet
26
Case Temperature
VCC
VPP
Setup and Confirm
Programming
Buffer Alignment
Cycling
Programming blocks
Suspend
Programming the flash
memory array
Parameter/Issue
Parameter/Issue
Word buffer boundaries in the array are determined by A[9:1] (0x000 through 0x1FF). The alignment start point is A[9:1]
= 0x000.
Some degradation in performance may occur is this limit is exceeded, but the internal algorithm continues to work
properly.
If the internal address counter increments beyond the block’s maximum address, addressing wraps around to the
beginning of the block.
If the number of words is less than 512, remaining locations must be filled with 0xFFFF.
With adequate continuity testing, programming equipment can rely on the WSM’s
internal verification to ensure that the device has programmed properly. This eliminates
the external post-program verification and its associated overhead.
BEFP Requirements and Considerations
BEFP Setup Phase
After receiving the BEFP Setup and Confirm command sequence, Status Register bit
SR.7 (Ready) is cleared, indicating that the WSM is busy with BEFP algorithm startup. A
delay before checking SR.7 is required to allow the WSM enough time to perform all of
its setups and checks (Block-Lock status, VPP level, etc.). If an error is detected, SR.4
is set and BEFP operation terminates. If the block was found to be locked, SR.1 is also
set. SR.3 is set if the error occurred due to an incorrect VPP level.
Reading from the device after the BEFP Setup and Confirm command sequence outputs
Status Register data. Do not issue the Read Status Register command; it will be
interpreted as data to be loaded into the buffer.
T
Nominal Vcc
Driven to V
Target block must be unlocked before issuing the BEFP Setup and Confirm commands.
The first-word address (WA0) of the block to be programmed must be held constant
from the setup phase through all data streaming into the target block, until transition
to the exit phase is desired.
WA0 must align with the start of an array buffer boundary.
For optimum performance, cycling must be limited below 50 erase cycles per block.
BEFP programs one block at a time; all buffer data must fall within a single block.
BEFP cannot be suspended.
Programming to the flash memory array can occur only when the buffer is full.
C
= 30
°
C ± 10°C
PPH
Requirement
Requirement
Order Number: 208042-05
-
-
-
-
-
1
1
2
-
3
P30-65nm
Notes
Notes
Apr 2010