PC28F512P30EFA Micron Technology Inc, PC28F512P30EFA Datasheet - Page 54

• Manufacturer Part Number: PC28F512P30EFA
• Manufacturer: Micron Technology Inc

Specifications of PC28F512P30EFA

• Cell Type: NOR
• Density: 512Mb
• Interface Type: Parallel/Serial
• Address Bus: 25b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: BGA
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Compliant

Figure 21: Synchronous Single-Word Array or Non-array Read Timing for Easy BGA
Notes:
1.
2.
Figure 22: Continuous Burst Read, showing an Output Delay Timing
Notes:
1.
2.
Datasheet
54
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
OE# [G]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the starting address is
not 4-word boundary aligned. See
page 38
CLK [C]
CE# [E]
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
CLK [C]
CE# [E]
.
for more information.
R105
R105
R301
R302
R303
R101
R102
R105
R105
R306
R106
R301
R303
R15
R104
R104
R101
R102
R2
R3
R7
R15
R306
Section 11.2.3, “End of Word Line (EOWL) Considerations” on
R4
R106
R7
R307
R304
R2
R3
R4
R312
R305
R307
R304
R305
R304
R305
R312
for Easy BGA
R9
R17
R8
R305
R304
Order Number: 208042-05
R304
P30-65nm
R305
Apr 2010