FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 4

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics (N-Channel)
12
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
Figure 3. Normalized On Resistance
9
6
3
0
9
6
3
0
Figure 1.
0
-75
2
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 3 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
DS
1
V
T
3
-25
GS
,
J
On Region Characteristics
,
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE (
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
GS
V
= 7 V
0
GS
= 8 V
2
4
= 10 V
25
μ
T
s
J
= 150
50
3
5
o
C
T
75
J
μ
= -55
s
T
J
o
100 125 150
= 25
C )
o
4
6
C
V
V
GS
GS
o
C
= 5 V
= 6 V
T
5
7
J
= 25 °C unless otherwise noted
4
0.001
0.01
400
300
200
100
0.1
20
10
Figure 2.
0
1
5
4
3
2
1
0
Figure 4.
0.2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
4
Figure 6.
V
GS
V
GS
V
= 5 V
SD
T
= 0 V
5
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
= 150
On-Resistance vs Gate to
GS
I
Source Voltage
3
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DRAIN CURRENT (A)
I
o
D
C
= 3 A
6
0.6
T
J
T
= 125
J
= 25
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
7
V
V
GS
o
GS
o
C
0.8
C
= 8 V
= 6 V
T
J
8
= -55
μ
s
T
V
J
GS
9
= 25
o
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1.0
V
C
= 7 V
GS
9
o
= 10 V
C
μ
s
1.2
12
10