FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 7

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics (P-Channel)
0.005
0.01
Figure 18. Forward Bias Safe Operating Area
0.1
10
20
10
8
6
4
2
0
1
0.1
Figure 16. Gate Charge Characteristics
0
THIS AREA IS
LIMITED BY r
I
D
= -2.3 A
2
SINGLE PULSE
T
R
T
-V
J
A
θ
DS
JA
= MAX RATED
= 25
V
, DRAIN to SOURCE VOLTAGE (V)
DD
= 160
DS(on)
4
Q
1
= -8 V
o
g
C
, GATE CHARGE (nC)
V
o
C/W
DD
6
= -10 V
10
8
V
DD
= -12 V
10
100
12
100 ms
10 s
10 ms
DC
1 ms
1 s
300
14
T
J
= 25
7
o
C unlenss otherwise noted
1000
100
10
0.1
Figure 17. Capacitance vs Drain
f = 1 MHz
V
GS
= 0 V
-V
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
1
10
www.fairchildsemi.com
C
C
C
oss
rss
iss
100