FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 5

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics (N-Channel)
0.005
Figure 9. Forward Bias Safe Operating Area
0.01
0.1
10
20
10
Figure 7.
8
6
4
2
0
1
0.1
0
I
THIS AREA IS
LIMITED BY r
D
= 3 A
0.5
SINGLE PULSE
T
R
T
V
J
A
θ
DS
JA
Gate Charge Characteristics
= MAX RATED
= 25
, DRAIN to SOURCE VOLTAGE (V)
= 160
DS(on)
Q
1
o
1.0
g
C
, GATE CHARGE (nC)
o
C/W
V
DD
= 25 V
1.5
10
V
DD
= 50 V
2.0
V
2.5
DD
100
= 75 V
100 ms
10 ms
10 s
1 ms
1 s
DC
300
3.0
T
J
= 25 °C unless otherwise noted
5
1000
100
10
1
0.1
Figure 8.
f = 1 MHz
V
GS
= 0 V
V
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
Figure 10.
1
10
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