TDA5252XT Infineon Technologies, TDA5252XT Datasheet - Page 43
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
TDA5252XT
Manufacturer Part Number
TDA5252XT
Description
Manufacturer
Infineon Technologies
Datasheet
1.TDA5252XT.pdf
(86 pages)
Specifications of TDA5252XT
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Product Depth (mm)
4.4mm
Product Length (mm)
9.7mm
Operating Supply Voltage (min)
2.1V
Operating Supply Voltage (max)
5.5V
Lead Free Status / Rohs Status
Compliant
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The diagram of Figure 3-7 has been measured directly at the PA-output at V
the matching circuit of about 3dB will decrease the output power. As shown in the diagram, 250
Ohm is the optimum impedance for operation at 3V. For an approximation of R
other supply voltages those 2 formulas can be used:
and
The behaviour of the power amplifier over the impedance and frequency is in principle the same as
of the TDA5250, but of course strongly depends on the matching network. (see also specification
of TDA5250)
Figure 3-7
The DC collector current I c of the power amplifier and the RF output power P o vary with the load
resistor R L . This is typical for overcritical operation of class C amplifiers. The collector current will
show a characteristic dip at the resonance frequency for this type of “overcritical” operation. The
depth of this dip will increase with higher values of R L .
Data Sheet
P
E =
R
OUT
OPT
V
~
P
S
~
O
R
I
C
OPT
V
S
Output power P o (mW) and collector efficiency E vs. load resistor R L .
43
[3 – 11]
[3 – 12]
[3 – 10]
S
=3V. A power loss in
OPT
TDA5252 G2
Version 1.1
Application
Power_E_vs_RL.wmf
and P
2007-02-26
OUT
at
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