H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 13

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

dress input of 00h. Five read cycles sequentially output the manufacturer code (20h), and the device code and 3rd, 4th
and 5th cycle ID, respectively. The command register remains in Read ID mode until further commands are issued to it.
Figure 26 shows the operation sequence, while following Table 15, Table 16, Table 17, and Table 18 explain the byte mean-
ing. Complete read id code table is Table 14.
during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells
being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to
wait for the next command, and the Status Register is cleared to value E0h when WP is high. Refer to Table 13 for device
status after reset operation. If the device is already in reset state a new reset command will not be accepted by the com-
mand register. The R/B pin transitions to low for tRST after the Reset command is written (see Figure 27).
Rev 0.0 / Jul. 2008
3.10 Read ID
3.11 Reset
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an ad-
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state
8 Gbit (1024 M x 8 bit) NAND Flash
H27U8G8T2B Series
Preliminary
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