H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 37

58T1893

H27U8G8T2BTR-BC

Manufacturer Part Number
H27U8G8T2BTR-BC
Description
58T1893
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27U8G8T2BTR-BC

Memory Type
Flash - NAND
Memory Size
8192Mbit
Memory Configuration
1024M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H27U8G8T2BTR-BC
Manufacturer:
HYNIX
Quantity:
10 000
Part Number:
H27U8G8T2BTR-BC
Manufacturer:
HYNIX
Quantity:
4 000
Rev 0.0 / Jul. 2008
I/Ox
I/Ox
R/B
R/B
I/Ox
R/B
R/B
I/Ox
R/B
I/Ox
60h
1
2
3
4
Figure 23 : Multiplane Copy Back with Random Data Input
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Address (3 Cycle)
Row Add. 1,2,3
00h
00h
85h
81h
Col. Add 1,2 & Row Add. 1,2,3
Col. Add 1,2 & Row Add. 1,2,3
: Fixed “Low”
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Valid
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Address (5 Cycle)
Address (5 Cycle)
Destination Address
A0 ~ A12 : Valid
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Destination Address
Address (5 Cycles)
Address (5 Cycles)
: Fixed “Low”
: Fixed “High”
: Fixed “Low”
60h
: Fixed “High”
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Address (3 Cycle)
05h
Row Add. 1,2,3
05h
Data
Data
: Fixed “High”
NOTE
1. Copy Back Program operation is allowed only within the same memory plane.
2. Any Command between 11h and 81h is prohibited except 70h and FFh
A0 ~ A12 : Valid
A0 ~ A12 : Valid
Address (2 Cycle)
Address (2 Cycle)
Col. Add 1,2
85h
85h
Col. Add 1,2
8 Gbit (1024 M x 8 bit) NAND Flash
Address (2 Cycles)
Address (2 Cycles)
Col. Add 1,2
35h
Col. Add 1,2
E0h
E0h
tR
Data
Data
H27U8G8T2B Series
Data Output
Data Output
11h
10h
tPROG
tDBSY
Preliminary
1
2
3
4
37

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