H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 15

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

NOTE:
NOTE:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
1. Block 0 is guaranteed to be valid at the time of the shipment up to 1K P/E cycles. The number of valid blocks is based
on single plane operations and may be little lower on two plane operations.
2. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum
Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these
or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to
Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the HYNIX SURE
Program and other relevant quality documents.
3. Minimum Voltage may undershoot to -2 V during transition and for less than 20ns during transitions.
Rev 0.0 / Jul. 2008
Symbol
V
Valid Block Number
T
T
IO
V
BIAS
T
STG
CC
A
Parameter
(2)
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Temperature Range Option 6)
Table 7 : Absulute maximum ratings
Table 6 : Number of Valid Blocks
Temperature Under Bias
Input or Output Voltage
Storage Temperature
Symbol
N
Supply Voltage
Parameter
VB
1998
Min
8 Gbit (1024 M x 8 bit) NAND Flash
Typ
H27U8G8T2B Series
Max
2048
– 50 to 125
– 65 to 150
– 0.6 to 4.6
– 0.6 to 4.6
– 40 to 85
0 to 70
Value
Preliminary
Blocks
Unit
Unit
°C
°C
°C
°C
V
V
15