H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 43

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
Vcc
GND
Rp value guidence
Rp (min) =
where IL is the sum of the input currnts of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
Device
Figure 29 : Ready / Busy Pin Electrical Specifications
Vcc (Max.) - V
R/B
open drain output
I
OL +
Rp
L
300n
200n
100n
OL
(Max.)
ibusy
=
Ready Vcc
3.3
4.2
1k
96
@ Vcc = 3.3 V, Ta = 25 °C, C
Fig. Rp vs tr, tf & Rp vs ibusy
ibusy
3.2V
tf
8 Gbit (1024 M x 8 bit) NAND Flash
tf
L
189
1.65
4.2
2k
V
V
OL
Rp (ohm)
OL
: 0.4V, V
290
4.2
3k
1.1
L
= 50 pF
Busy
OH
H27U8G8T2B Series
: 2.4V
381
0.825
4.2
4k
Preliminary
tr
3m
2m
1m
V
OH
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