H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 52

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
MARKING INFORMATION -
- h y n ix
- K O R
- H 2 7 U 8 G 8 T 2 B x x -x x
- Y : Y e ar (ex: 8= year 2 0 0 8 , 9= year 20 09 )
- w w : W o rk W e ek (e x: 1 2 = w o rk w e ek 1 2 )
- x x : P roce ss C od e
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
H
H : H yn ix
2 7 : N A N D Fla sh
U : P o w e r S u p p ly
8 G : D en sity
8 : B it O rg an iza tion
T : C la ssification
2 : M o de
B : V e rsion
x : P a cka g e T ype
x : P a cka g e M ate rial
x : B ad B lo ck
x : O p e ra tin g T em pe ra tu re
2
7
U
8
TSOP1
G
M a rk in g E x a m p le
8
: H yn ix S ym b o l
: O rigin C o u n try
: P a rt N u m ber
: U (2 .7 V ~ 3 .6 V )
: 8 G b it
: 8(x8 )
: M u lti Level C ell+ S in g le D ie+ Large B lo ck
: 2 (1 n C E & 1 R /n B ; S e q u e n tia l R ow R e a d D isa b le )
: 3rd G en era tio n
: T (4 8 -T S O P 1 )
: B la n k(N o rm a l), R (L e ad & H a lo g e n F ree )
: B (In clu d ed B ad B lo ck ), S (1~ 5 B a d B lock ),
: C (0 ℃ ~ 7 0 ℃ ), I(-4 0℃ ~ 8 5 ℃ )
: Fixed Item
: N o n -fixed Item
P (A ll G oo d B lock)
T
2
8 Gbit (1024 M x 8 bit) NAND Flash
B
x
Y
x
W
H27U8G8T2B Series
K
W
-
O
x
x
Preliminary
R
x
x
52