H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 7

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

1024 Blocks
per Plane
2048 Blocks
per device
Page Buffer
Rev 0.0 / Jul. 2008
NOTE:
1. L must be set to Low.
2. 1st & 2nd cycle are Column Address.
3. 3rd to 5th cycle are Row Address.
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
1st Cycle
4K Bytes
2044
2046
0
2
.
.
.
0 Plane
128 Bytes
IO0
A13
A21
A29
A0
A8
Figure 3 : Array Organization
Table 3 : Address Cycle Map
IO1
A14
A22
A30
A1
A9
2045
2047
1
3
.
.
.
1 Plane
IO2
A10
A15
A23
L
A2
(1)
8 Gbit (1024 M x 8 bit) NAND Flash
IO3
A11
A16
A24
L
A3
(1)
IO4
A12
A17
A25
L
A4
(1)
I/O0 ~ 7
H27U8G8T2B Series
IO5
1 Page = (4K+128) Bytes
1 Block = (4K+128) Bytes x 128 pages
1 Device = (512K+16K)Byte x 2048 Block
A18
A26
L
L
A5
(1)
(1)
= (512K+16K) Bytes
= 8 Gbit
IO6
A19
A27
L
L
A6
Preliminary
(1)
(1)
IO7
A20
A28
L
L
A7
(1)
(1)
7