H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 3

58T1893

H27U8G8T2BTR-BC

Manufacturer Part Number
H27U8G8T2BTR-BC
Description
58T1893
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27U8G8T2BTR-BC

Memory Type
Flash - NAND
Memory Size
8192Mbit
Memory Configuration
1024M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H27U8G8T2BTR-BC
Manufacturer:
HYNIX
Quantity:
10 000
Part Number:
H27U8G8T2BTR-BC
Manufacturer:
HYNIX
Quantity:
4 000
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
MULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel opera-
tions on both planes are available, halving program, read
and erase time.
NAND INTERFACE
- x8 bus width.
- Address / Data Multiplexing
- Pin-out compatibility for all densities
SUPPLY VOLTAGE
- 3.3 V device : Vcc = 2.7 V ~3.6 V
MEMORY CELL ARRAY
- (4 K + 128) bytes x 128 pages x 2048 blocks
PAGE SIZE
- (4 K + 128 spare) Bytes
BLOCK SIZE
- (512 K + 16 K spare) Bytes
PAGE READ / PROGRAM
- Random access : 60 us (max.)
- Sequential access : 25 ns (min.)
- Page program time : 800 us (typ.)
- Multi-Plane Program time (2 pages) : 800 us (typ.)
FAST BLOCK ERASE
- Block erase time: 2.5 ms (typ.)
- Multi-Block Erase time (2 blocks) : 2.5 ms (typ.)
Rev 0.0 / Jul. 2008
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code
- 3rd cycle : Internal chip number, Cell Type, Number of Si-
- 4th cycle : Page size, Block size, Organization, Spare size
- 5th cycle : Multiplane Information
COPY BACK PROGRAM
- Fast Data Copy without external buffer
CHIP ENABLE DON'T CARE
- Simple interface with microcontroller
STATUS REGISTER
- Normal Status Register (Read/Program/Erase)
HARDWARE DATA PROTECTION
- Device locked during Power transitions.
DATA RETENTION
- 5,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- H27U8G8T2BTR-BX
8 Gbit (1024 M x 8 bit) NAND Flash
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
multaneously Programmed Pages.
- H27U8G8T2BTR-BX (Lead & Halogen Free)
(with 4 bit / 528 byte ECC)
H27U8G8T2B Series
Preliminary
3

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