SAM7S32 Atmel Corporation, SAM7S32 Datasheet - Page 18

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SAM7S32

Manufacturer Part Number
SAM7S32
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7S32

Flash (kbytes)
32 Kbytes
Pin Count
48
Max. Operating Frequency
55 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
21
Ext Interrupts
21
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Uart
2
Ssc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
8
Self Program Memory
NO
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
8. Memories
8.1
8.2
8.3
18
SAM7S512
SAM7S256
SAM7S128
SAM7S Series
• 512 Kbytes of Flash Memory, dual plane
• 64 Kbytes of Fast SRAM
• 256 Kbytes of Flash Memory, single plane
• 64 Kbytes of Fast SRAM
• 128 Kbytes of Flash Memory, single plane
• 32 Kbytes of Fast SRAM
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
6175L–ATARM–28-Jul-11

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