SAM7S32 Atmel Corporation, SAM7S32 Datasheet - Page 626
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SAM7S32
Manufacturer Part Number
SAM7S32
Description
Manufacturer
Atmel Corporation
Specifications of SAM7S32
Flash (kbytes)
32 Kbytes
Pin Count
48
Max. Operating Frequency
55 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
21
Ext Interrupts
21
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Uart
2
Ssc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
8
Self Program Memory
NO
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
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40.7.2.11
40.7.3
40.7.3.1
40.7.4
40.7.4.1
40.7.4.2
626
SAM7S Series
Non Volatile Memory Bits (NVM Bits)
Parallel Input/Output Controller (PIO)
ADC: Sleep Mode
NVM Bits: Write/Erase Cycles Number
PIO: Leakage on PA17 - PA20
PIO: Electrical Characteristics on NRST and PA0-PA16 and PA21-31
None.
If Sleep mode is activated while there is no activity (no conversion is being performed), it will
take effect only after a conversion occurs.
To activate sleep mode as soon as possible, it is recommended to write successively, ADC
Mode Register (SLEEP) then ADC Control Register (START bit field); to start an analog-to-digi-
tal conversion, in order put ADC into sleep mode at the end of this conversion.
The maximum number of write/erase cycles for Non Volatile Memory bits is 100. This includes
Lock Bits (LOCKx), General Purpose NVM bits (GPNVMx) and the Security Bit.
This maximum number of write/erase cycles is not applicable to 256 KB Flash memory, it
remains at 10K for the Flash memory.
None.
When PA17, PA18, PA19 or PA20 (the I/O lines multiplexed with the analog inputs) are set as
digital inputs with pull-up disabled, the leakage can be 9 µA in worst case and 90 nA in typical
case per I/O when the I/O is set externally at low level.
Set the I/O to VDDIO by internal or external pull-up.
When NRST or PA0-PA16 or PA21-PA31 are set as digital inputs with pull-up enabled, the volt-
age of the I/O stabilizes at VPull-up.
Vpull-up
This condition causes a leakage through VDDIO. This leakage is 45 µA per pad in worst case at
3.3 V and 25 µA at 1.8V.
I Leakage
VPull-up Min
VDDIO - 0.65 V
Parameter
I Leakage at 3,3V
I Leakage at 1.8V
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
VPull-up Max
VDDIO - 0.45 V
Typ
2.5
1
µA
µA
Max
45
25
µA
µA
6175L–ATARM–28-Jul-11
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