SAM9XE512 Atmel Corporation, SAM9XE512 Datasheet - Page 245

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SAM9XE512

Manufacturer Part Number
SAM9XE512
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9XE512

Flash (kbytes)
512 Kbytes
Pin Count
217
Max. Operating Frequency
180 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
2
Uart
6
Ssc
1
Ethernet
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
Yes
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
312
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.65 to 1.95
Fpu
No
Mpu / Mmu
No / Yes
Timers
6
Output Compare Channels
6
Input Capture Channels
6
32khz Rtc
Yes
Calibrated Rc Oscillator
No
Figure 24-3. Read Burst, 32-bit SDRAM Access
6254C–ATARM–22-Jan-10
SDRAMC_A[12:0]
D[31:0]
SDWE
SDCS
(Input)
SDCK
RAS
CAS
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
Row n
t
RCD
= 3
AT91SAM9XE128/256/512 Preliminary
col a
CAS = 2
col b
Dna
col c
Dnb
col d
Dnc
col e
Dnd
col f
Dne
Dnf
245

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